ZUO Ran, Professor
Email: rzuo@ujs.edu.cn

Fields of research:
1. Theoretical analysis and numerical simulation of transport process and chemical reaction in GaN metal organic vapor phase epitaxy;
2. Crystal growth of solar photovoltaic materials;
3. Sapphire material crystal growth

Granted Projects:
1. The gas phase and surface chemical reaction path in GaN metal organic gas phase epitaxy;
2. Analysis and simulation of crystal orientation and growth front of sapphire and silicon single crystal growth.

Selected Publications:
1. Shi Juncao, Zuo Ran, Meng Suci, DFT study on adduct reaction paths of GaN MOCVD growth, Science in China E, 2013，6
2. Ran Zuo, Haiqun Yu, Nan Xu, Xiaokun He, Influence of Gas Mixing and Heating on Gas-Phase Reactions in GaN MOCVD Growth, ECS Journal of Solid State Science and Technology, 1 (1) 2012

Patents:
1. Double heater mobile heat shield type Czochralski single crystal furnace, patent number: 201110081268
2. A rectangular chemical vapor deposition reactor, patent number: 200910232921
3. A chemical vapor deposition reaction chamber structure with multiple shower heads, patent number: 200910027837
4. An integrated multi-reaction chamber flow-work epitaxial growth method and system, patent number: 201010210024
5. A vertical spray MOCVD reactor with top in and top out, patent number: 200720040098
6. A sweating and heat transfer type solar photovoltaic light-heat combined window, patent number: 201010224257.7
7. Solar air collector combined with heat storage materials, patent number: CN200510040068.3
8. A MOCVD reaction chamber with a horizontal tangential inlet and a center vertical outlet, patent number: 200810122991